IPT2506-BEA Datasheet, PDF (1/4 Pages) IP SEMICONDUCTOR CO., LTD. – High current density due to double mesa technology

IP Semiconductor Co., Ltd.
IPT2506-xxA
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT2506-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT2506-xx series is 3 Quadrants triacs, This is specially
recommended for use on inductive Loads.
The IPT2506-xxA (Insulated version) series are isolated
internally they provides a 2500V RMS isolation voltage from
all three terminals to external heatsink.
TO-220A
MAIN FEATURES
Symbol
Value
IT(RMS)
25
VDRM / VRRM
600
VTM
≤ 1.55
Unit
A
V
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
RMS on–state current
(360º conduction angle )
Tc = 90℃
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
t = 8.3ms
t = 10ms
I²t Value for fusing tp = 10ms
Critical Rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
Symbol
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
ITSM
I²t
dI / dt
IGM
PG(AV)
Value
-40 to +150
-40 to +125
600
600
700
700
25
260
250
340
50
4
1
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : [phone], [e-mail]
Unit
℃
V
V
A
A
A²s
A/us
A
W
1