IPT1206-TEF Datasheet, PDF (1/4 Pages) IP SEMICONDUCTOR CO., LTD. – High current density due to double mesa technology

IP Semiconductor Co., Ltd.
IPT1206-xxF
High current density due to double mesa technology; SIPOS
and Glass Passivation. IPT1206-xx series are suitable for
general purpose AC Switching. They can be used as an
ON/OFF function In application such as static relays,
heating regulation, Induction motor stating circuits… or
for phase Control operation light dimmers, motor speed
Controllers.
The IPT1206-xxF(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage from
all three terminals to external heatsink..
MAIN FEATURES
Symbol
IT(RMS)
VDRM / VRRM
VTM
Value
12
600
≤ 1.55
Unit
A
V
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(Full sine wave)
Tj = 25℃
Tc = 79 ℃
Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms
(full cycle, Tj = 25℃)
f = 50 Hz t = 20ms
I²t Value for fusing tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
Symbol
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
ITSM
I²t
dI / dt
IGM
PG(AV)
Value
-40 to +150
-40 to +125
600
600
700
700
12
126
120
78
50
4
1
Unit
℃
V
V
A
A
A²s
A/us
A
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : [phone], [e-mail]
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