IPS825-40A Datasheet, PDF (1/4 Pages) IP SEMICONDUCTOR CO., LTD. – silicon controlled rectifiers

IP Semiconductor Co., Ltd.
IPS825-xxA
IPS825 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa echnology;
SIPOS and Glass passivation technology used has reliable
operation up to 125℃ junction temperature. Low Igt parts
available.
Typical applications are in rectification (softstart) and
these products are designed to be used with international
recetifier input diodes, switches and output recetifiers
which are available in identical package outlines.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
25
A
VDRM / VRRM
800
V
TO-220A
VTM
≤ 1.6
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value
RMS on–state current (Tc = 110℃, 180º conduction half sine wave)
IT(RMS)
25
Average on–state current (Tc = 110℃, 180º conduction half sine wave)
IT(AV)
16
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
-40 to +150
-40 to +125
800
800
900
900
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM
applied
250
ITSM
One cycle Non Repetitive surge current, 10ms sine pulse, no voltage
applied
260
I²t Value for fusing, 10ms sine pulse, rated VRRM applied
I²t Value for fusing, 10ms sine pulse, no voltage applied
310
I²t
320
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)
dI/dt
100
Peak gate current
tp = 20us, Tj = 125℃
IGM
4
Average gate power dissipation
Tj = 125℃
PG(AV)
1
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : [phone], Fax : [phone], [e-mail]
Unit
A
A
℃
V
V
A
A²s
A/us
A
W
1