|
IPS820-30B Datasheet, PDF (1/4 Pages) IP SEMICONDUCTOR CO., LTD. – silicon controlled rectifiers | |||
|
IP Semiconductor Co., Ltd.
IPS820 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125â junction temperature.
Low Igt parts available.
IPS820 series are suitable for general purpose
applications, a high gate sensitivity is required.
IPS820-xxB
MAIN FEATURES
Symbol
Value
IT(RMS)
20
IT(AV)
12
VDRM / VRRM
800
VTM
⤠1.6
Unit
A
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS onâstate current (Tc = 100â, 180º conduction half sine wave)
Average onâstate current
(Tc = 100â, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25â
Tj = 25â
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25â
Tj = 25â
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing (tp = 10ms, Half Cycle)
Critical rate of rise of turned â on current (IG = 2 X IGT, Tj = 125â)
Peak gate current
Average gate power dissipation
tp = 20us, Tj = 125â
Tj = 125â
Symbol
IT(RMS)
Value
20
Unit
A
IT(AV)
12
A
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
ITSM
I²t
dI/dt
IGM
PG(AV)
-40 to +150
-40 to +125
800
800
900
900
200
200
50
5
1
â
V
V
A
A²s
A/us
A
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
|
▷ |