IPS812-05B Datasheet, PDF (1/4 Pages) IP SEMICONDUCTOR CO., LTD. – silicon controlled rectifiers

IP Semiconductor Co., Ltd.
IPS812 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS812 series are suitable for general purpose
applications, a high gate sensitivity is required.
IPS812-xxB
MAIN FEATURES
Symbol
Value
IT(RMS)
12
IT(AV)
8
VDRM / VRRM
800
VTM
≤ 1.6
Unit
A
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 105℃, 180º conduction half sine wave)
Average on–state current
(Tc = 105℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing (tp = 10ms, Half Cycle)
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)
Peak gate current
Average gate power dissipation
tp = 20us, Tj = 125℃
Tj = 125℃
Symbol
IT(RMS)
IT(AV)
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
ITSM
I²t
dI/dt
IGM
PG(AV)
Value
12
8
-40 to +150
-40 to +110
800
800
900
900
140
98
50
4
1
Unit
A
A
℃
V
V
A
A²s
A/us
A
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : [phone], Fax : [phone], [e-mail]
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