HUF76137P3 Datasheet, PDF (8/10 Pages) Fairchild Semiconductor – 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

HUF76137P3, HUF76137S3S
PSPICE Electrical Model
SUBCKT HUF76137 2 1 3 ; REV May 1998
CA 12 8 3.1e-9
CB 15 14 3.1e-9
CIN 6 8 1.88e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.7
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.73e-9
LSOURCE 3 7 2.63e-9
GATE
1
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.2e-3
RGATE 9 20 1
RLDRAIN 2 5 10
RLGATE 1 9 67.3
RLSOURCE 3 7 26.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.1e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
DPLCAP ₅
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+
EVTHRES
+ ₁₉ -
EVTEMP
8
RGATE _{+ 18 - 6}
9
20 ²²
RLGATE
CIN
S1A
12 ₁₃
8
S2A
14
15
13
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
8
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ ¹⁴
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),4))}
.MODEL DBODYMOD D (IS = 2.5e-12 IKF = 4 RS = 3.65e-3 TRS1 = 3e-4 TRS2 = 6e-6 CJO = 3.1e-9 TT = 9e-8 M = 4e-1 XTI =5.2 )
.MODEL DBREAKMOD D (RS = 1.25e-2 TRS1 = 3e-3 TRS2 = -3.5e-5 IKF = 10)
.MODEL DPLCAPMOD D (CJO = 2.5e-9 IS = 1e-30 N = 10 M = 7.5e-1)
.MODEL MMEDMOD NMOS (VTO = 1.73 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1)
.MODEL MSTROMOD NMOS (VTO = 2.08 KP = 130 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.38 KP =1e-2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10 RS = 1e-1)
.MODEL RBREAKMOD RES (TC1 = 1e-3 TC2 = -1e-9)
.MODEL RDRAINMOD RES (TC1 = 1.1e-2 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 7e-3 TC2 = -7e-9)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 8e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -1e-5)
.MODEL RVTEMPMOD RES (TC1 = -1.65e-3 TC2 = -1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.5 VOFF= -0.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= -6.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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