HCTS20MS Datasheet, PDF (8/8 Pages) Intersil Corporation – Radiation Hardened Dual 4-Input NAND Gate

Die Characteristics
DIE DIMENSIONS:
2.20 x 2.24(mm)
METALLIZATION:
Type: SiAl
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO₂
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 10⁵A/cm²
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCTS20MS
HCTS20MS
A1
VCC
D2
(1)
(14)
(13)
B1 (2)
NC (3)
(12) C2
(11) NC
C1 (4)
(10) B2
D1 (5)
(9) A2
(6)
(7)
(8)
Y1
GND
Y2
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS20 is TA14426A.
Spec Number 518619
427