CD4049UBMS Datasheet, PDF (7/7 Pages) Intersil Corporation – CMOS Hex Buffer/Converter

CD4049UBMS
Typical Performance Characteristics (Continued)
10^{5 AMBIENT TEMPERATURE (T}A⁾
86 _{= +25}o_C
4
2
10⁴
86
4
SUPPLY VOLTAGE
(VDD) = 15V
10^{3 2}
86
4
2
10²
8
6
4
10V
10V
5V
LOAD CAPACITANCE (CL) = 50pF
(11pF FIXTURE + 39pF EXT)
2
CL = 15pF (11pF FIXTURE + 4pF EXT
10
2 4 6 8 2 4 68 2 4 68 2 4 68
10
10²
10³
10⁴
10⁵
INPUT FREQUENCY (f) (kHz)
FIGURE 8. TYPICAL POWER DISSIPATION vs FREQUENCY
CHARACTERISTICS
10⁶ _{AMBIENT TEMPERATURE (TA) = +25oC}
10⁵
15V; 1MHz
10⁴
15V; 100KHz
10³
10V; 100KHz
15V; 10KHz
10²
10V; 10KHz
10
15V; 1KHz
SUPPLY VOLTAGE (VCC) = 5V
FREQUENCY (f) = 10KHz
1
10 10² 10³ 10⁴ 10⁵ 10⁶ 10⁷ 10⁸
INPUT RISE AND FALL TIME (tr, tf) (ns)
FIGURE 9. TYPICAL POWER DISSIPATION vs INPUT RISE
AND FALL TIMES PER INVERTER
Chip Dimensions and Pad Layout
Dimensions in parenthesis are in millimeters and are derived
from the basic inch dimensions as indicated. Grid
graduations are in mils (10^-3 inch).
METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
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