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5962-0620701Q3A Datasheet, PDF (7/9 Pages) Intersil Corporation – ±15kV ESD Protected, +3.3V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers
5962-0620701Q3A, 5962-0620702Q3A, 5962-0620703Q2A, 5962-0620704Q2A
Electrical Specifications ICL3238E Test Conditions: VCC = 3V to 3.6V, C1 - C4 = 0.1µF, Unless Otherwise Specified. Typicals are at
TA = 25°C, VCC = 3.3V (Continued)
PARAMETER
TEST CONDITIONS
TEMP
(°C) MIN
TYP
MAX UNITS
ENHANCED AUTOMATIC POWER-DOWN (FORCEON = GND, FORCEOFF = VCC)
Receiver Input Thresholds to
INVALID High
Powered Up
Full
-2.7
-
2.7
V
Receiver Input Thresholds to
INVALID Low
Powered Down
Full
-0.3
-
0.3
V
INVALID Output Voltage Low
INVALID Output Voltage High
TRANSMITTER OUTPUTS
IOUT = 1.0mA
IOUT = -1.0mA
Full
-
-
Full VCC-0.6
-
0.4
V
-
V
Output Voltage Swing
All Transmitter Outputs Loaded with 3kΩ to Ground
Full
±5.0
±5.4
-
V
Output Short-Circuit Current
Full
-
±35
±60
mA
Output Leakage Current
VOUT = ±12V, VCC = 0V or 3V to 3.6V,
Automatic Power-down or FORCEOFF = GND
Full
-
-
±25
µA
TIMING CHARACTERISTICS
Maximum Data Rate
Transmitter Skew
Receiver Skew
Transition Region Slew Rate
RL = 3kΩ, CL = 1000pF, One Transmitter Switching
Full
250
tPHL - tPLH
Full
-
tPHL - tPLH
Full
-
VCC = 3.3V,
CL = 150pF to 1000pF
Full
6
RL = 3kΩ to 7kΩ,
Measured From 3V to -3V or -3V
CL = 150pF to 2500pF
Full
4
to 3V
500
-
kbps
200
1000
ns
100
1000
ns
15
30
V/µs
12
30
V/µs
ESD PERFORMANCE
RS-232 Pins (TOUT, RIN)
IEC61000-4-2 Air Gap Discharge
IEC61000-4-2 Contact Discharge
25
-
±15
-
kV
25
-
±8
-
kV
Human Body Model (MIL-STD 883 Method 3015)
25
-
±15
-
kV
All Other Pins
Human Body Model (MIL-STD 883 Method 3015)
25
-
±2.5
-
kV
NOTE:
4. These inputs utilize a positive feedback resistor. The input current is negligible when the input is at either supply rail.
Die Characteristics
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 13.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 10.0kÅ ± 1kÅ
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
GND
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
ICL3221E: 286
ICL3232E: 296
ICL3243E: 464
ICL3238E: 1235
Process:
Si Gate CMOS
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
7
FN6297.0
May 31, 2006