ISL8840AMZ Datasheet, PDF (5/10 Pages) Intersil Corporation – Full Homogenous Lot Processing in Wafer Fab

ISL8840AMZ, ISL8841AMZ, ISL8842AMZ, ISL8843AMZ, ISL8844AMZ, ISL8845AMZ
Electrical Specifications
Recommended operating conditions unless otherwise noted. Refer to “Functional Block Diagram” on page 3.
V_DD = 15V, R_t = 10kΩ, C_t = 3.3nF, T_A = -55 to +125°C, Typical values are at T_A = +25°C. Parameters with MIN
and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested (Continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Gain, A_CS = ΔV_COMP/ΔV_CS
CS to OUT Delay
0 < V_CS < 910mV, V_FB = 0V
2.5
3.0
3.5
V/V
-
35
60
ns
ERROR AMPLIFIER
Open Loop Voltage Gain
(Note 6)
60
90
-
dB
Unity Gain Bandwidth
(Note 6)
1.0
1.5
-
MHz
Reference Voltage
FB Input Bias Current
COMP Sink Current
COMP Source Current
COMP VOH
COMP VOL
PSRR
V_FB = V_COMP
2.460
2.500
2.535
V
V_FB = 0V
-1.0
-0.2
1.0
µA
V_COMP = 1.5V, V_FB = 2.7V
1.0
-
-
mA
V_COMP = 1.5V, V_FB = 2.3V
-0.4
-
-
mA
V_FB = 2.3V
4.80
-
VREF
V
V_FB = 2.7V
0.4
-
1.0
V
Frequency = 120Hz, V_DD = 12V to
60
80
-
dB
30V (Note 6)
OSCILLATOR
Frequency Accuracy
Frequency Variation with V_DD
Temperature Stability
Initial, T_A = +25°C
T_A = +25°C, (f_30V - f_10V)/f_30V
(Note 6)
48
51
53
kHz
-
0.2
1.0
%
-
-
5
%
Amplitude, Peak-to-Peak
Static Test
-
1.75
-
V
RTCT Discharge Voltage (Valley Voltage)
Static Test
-
1.0
-
V
Discharge Current
RTCT = 2.0V
6.2
8.0
8.5
mA
OUTPUT
Gate VOH
Gate VOL
Peak Output Current
Rise Time
Fall Time
GATE VOL UVLO Clamp Voltage
PWM
V_DD - OUT, I_OUT = -200mA
OUT - GND, I_OUT = 200mA
C_OUT = 1nF (Note 6)
C_OUT = 1nF (Note 6)
C_OUT = 1nF (Note 6)
V_DD = 5V, I_LOAD = 1mA
-
1.0
2.0
V
-
1.0
2.0
V
-
1.0
-
A
-
20
40
ns
-
20
40
ns
-
-
1.2
V
Maximum Duty Cycle
(ISL8840AMBEPZ, ISL8842AMBEPZ,
ISL8843AMBEPZ)
COMP = VREF
94.0
96.0
-
%
Maximum Duty Cycle
(ISL8841AMBEPZ, ISL8844AMBEPZ,
ISL8845AMBEPZ)
COMP = VREF
47.0
48.0
-
%
Minimum Duty Cycle
COMP = GND
-
-
0
%
NOTES:
5. This is the V_DD current consumed when the device is active but not switching. Does not include gate drive current.
6. Limits established by characterization and are not production tested.
7. Adjust V_DD above the start threshold and then lower to 15V.
5
FN6792.1
December 1, 2011