ISL6269A Datasheet, PDF (5/13 Pages) Intersil Corporation – High-Performance Notebook PWM Controller

ISL6269A
Electrical Specifications
PARAMETER
These specifications apply for V_IN = 15V, T_A = -10°C to +100°C, unless otherwise stated.
All typical specifications T_A = +25°C, VCC = 5V, PVCC = 5V (Continued)
SYMBOL
TEST CONDITIONS
MIN TYP
POWER GOOD
PGOOD Pull Down Impedance
PGOOD Leakage Current
PGOOD Maximum Sink Current (Note 3)
R_{PG_SS}
R_{PG_UV}
R_{PG_OV}
R_{PG_OC}
I_PGOOD
PGOOD = 5mA Sink
PGOOD = 5mA Sink
PGOOD = 5mA Sink
PGOOD = 5V
80
95
53
63
26
32
-
0.1
-
5.0
PGOOD Soft-Start Delay
GATE DRIVER
T_SS
EN High to PGOOD High
2.20 2.75
UG Pull-Up Resistance
UG Source Current (Note 3)
UG Sink Resistance
UG Sink Current (Note 3)
LG Pull-Up Resistance
LG Source Current (Note 3)
LG Sink Resistance
LG Sink Current (Note 3)
UG to LG Deadtime
LG to UG Deadtime
BOOTSTRAP DIODE
R_UGPU
I_UGSRC
R_UGPD
I_UGSNK
R_LGPU
I_LGSRC
R_LGPD
I_LGSNK
t_UGFLGR
t_LGFUGR
200mA Source Current
UG - PHASE = 2.5V
250mA Sink Current
UG - PHASE = 2.5V
250mA Source Current
LG - PGND = 2.5V
250mA Sink Current
LG - PGND = 2.5V
UG falling to LG rising, no load
LG falling to UG rising, no load
-
1.0
-
2.0
-
1.0
-
2.0
-
1.0
-
2.0
-
0.5
-
4.0
-
21
-
14
Forward Voltage
Reverse Leakage
CONTROL INPUTS
V_F
PVCC = 5V, I_F = 2mA
I_R
V_R = 25V
-
0.58
-
0.2
EN High Threshold
EN Low Threshold
FCCM High Threshold
FCCM Low Threshold
EN Leakage
FCCM Leakage
PROTECTION
V_ENTHR
V_ENTHF
V_FCCMTHR
V_FCCMTHF
I_ENL
I_ENH
I_FCCML
I_FCCMH
EN = 0V
EN = 5.0V
FCCM = 0V
FCCM = 5.0V
2.0
-
-
-
2.0
-
-
-
-
0.1
-
0.1
-
0.1
-
2.0
ISEN OCP Threshold
ISEN Short-Circuit Threshold
UVP Threshold
OVP Rising Threshold
OVP Falling Threshold
OTP Rising Threshold (Note 3)
OTP Hysteresis (Note 3)
NOTE:
3. Guaranteed by characterization.
I_OC
I_SC
V_UV
V_OVR
V_OVF
T_OTR
T_OTHYS
ISEN sourcing
ISEN sourcing
19
26
-
50
81
84
113 116
100 103
-
150
-
25
MAX UNIT
133
Ω
89
Ω
46
Ω
1.0 µA
-
mA
3.30 ms
1.5
Ω
-
A
1.5
Ω
-
A
1.5
Ω
-
A
0.9
Ω
-
A
-
ns
-
ns
-
V
-
µA
-
V
1.0
V
-
V
1.0
V
1.0 µA
1.0 µA
1.0 µA
-
µA
33
µA
-
µA
87
%
119
%
106
%
-
°C
-
°C
5
FN9253.1
August 7, 2006