IRFAC40 Datasheet, PDF (5/7 Pages) Intersil Corporation – 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

IRFAC40, IRFAC42
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
V_GS =10V
V_GS = 6.0V
V_GS = 5.5V
10
V_DS ≥ 100V
80µs PULSE TEST
1
6
V_GS = 5.0V
4
0.1
T_J = 150^oC
T_J = 25^oC
2
V_GS = 4.5V
V_GS = 4.0V
0
0
3
6
9
12
15
0.01 ₀
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5
80µs PULSE TEST
4
3
2
V_GS = 10V
V_GS = 20V
3.0
I_D = 3.4A
V_GS = 10V
2.4
1.8
1.2
1
0.6
0
0
6
12
18
24
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0
30
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
I_D = 250µA
1.15
1.05
3000
2400
1800
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1200
C_OSS
600
C_RSS
01
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5