IRF9540 Datasheet, PDF (5/7 Pages) Intersil Corporation – 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
I_D = 250µA
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
T_J = -55^oC
9
T_J = 25^oC
6
T_J = 125^oC
3
0
0
-20
-40
-60
-80
-100
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
2000
1600
1200
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
800
C_OSS
400
C_RSS
0
0
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_J = 150^oC
T_J = 25^oC
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
I_D = -19A
-5
-10
V_DS = -20V
V_DS = -50V
V_DS = -80V
0
20
40
60
80
Q_g(TOT), GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-19