IRF520 Datasheet, PDF (5/7 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF520
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
1000
800
600
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.95
0.85
0.75
-60
0
60
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
C_ISS
200
C_OSS
C_RSS
0
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
4
T_J = 25^oC
3
T_J = 175^oC
2
1
V_DS ≥ 50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
3
6
9
12
15
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
T_J = 175^oC
1
T_J = 25^oC
0.1
0
0.4
0.8
1.2
1.6
2.0
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 9.2A
16
12
V_DS = 20V
V_DS = 50V
V_DS = 80V
8
4
0
0
3
6
9
12
15
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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