IRF440 Datasheet, PDF (5/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Typical Performance Curves (Continued)
IRF440
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-60
0
60
120
180
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GS
1200
C_OSS
600
C_RSS
0
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
V_DS ≥ 50V
80µs PULSE TEST
12
9
6
T_J = 25^oC
T_J = 150^oC
3
0
0
3
6
9
12
15
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
T_J = 150^oC
1
T_J = 25^oC
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 8.0A
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
0
0
12
24
36
48
60
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5