IRF230 Datasheet, PDF (5/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

IRF230, IRF231, IRF232, IRF233
Typical Performance Curves Unless Otherwise Specified (Continued)
10
80µs PULSE TEST
8
6
4
10V
9V
8V
7V
6V
V_GS = 5.0V
2
4.0V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
V_DS > I_D(ON) x r_DS(ON)MAX
80µs PULSE TEST
8
6
125^oC
4
25^oC
-55^oC
2
0
0
1
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
0.8
80µs PULSE TEST
V_GS = 10V
0.6
2.2
I_D = 3.5A
V_GS = 10V
1.8
1.4
1.0
V_GS = 20V
0.2
0.6
0
0
10
20
30
40
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.2
-60 -40 -20 0 20 40 60 80 100 120 140
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
I_D = 250µA
1.15
1.05
2000
1600
1200
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.95
800
C_ISS
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
0
1
C_OSS
C_RSS
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5