HUF76429P3 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

HUF76429P3, HUF76429S3S
Typical Performance Curves (Continued)
1.2
1.2
V_GS = V_DS, I_D = 250µA
I_D = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80 -40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
1000
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_OSS ≅ C_DS + C_GD
100
30
0.1
C_RSS = C_GD
1.0
10
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V_DD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
I_D = 44A
I_D = 22A
0
0
5
10 15
20 25 30 35 40
Q_g, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
600
V_GS = 4.5V, V_DD = 30V, I_D = 30A
450
t_r
300
150
t_f
t_d(OFF)
t_d(ON)
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
250
V_GS = 10V, V_DD = 30V, I_D = 47A
200
t_f
150
t_r
100
t_d(OFF)
50
t_d(ON)
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
5