HUF76105DK8 Datasheet, PDF (5/12 Pages) Fairchild Semiconductor – 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

HUF76105DK8
Typical Performance Curves (Continued)
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = 15V
20
15
-55^oC
25^oC
150^oC
10
5
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
25
V_GS = 10V
V_GS = 5V
20
V_GS = 4V
15
V_GS = 3.5V
10
V_GS = 3V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_A = 25^oC
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
110
I_D = 5A
90
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
70
I_D = 1.4A
50
30
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.8 _{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
1.6 ^{VGS = 10V, ID = 5A}
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
V_GS = V_DS, I_D = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5
1.15
I_D = 250µA
1.1
1.05
1.0
0.95
0.9
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE