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HS-81C55RH Datasheet, PDF (5/14 Pages) Intersil Corporation – Radiation Hardened 256 x 8 CMOS RAM
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Specifications HS-81C55RH, HS-81C56RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
GROUP A
SYMBOL CONDITIONS SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
WRITE to Port Output
Port Input Setup Time
Port Input Hold Time
Strobe to Buffer Full
Strobe Width
READ to Buffer Empty
Strobe to INTR Off
READ to INTR Off
Port Setup Time to Strobe
Post Hold Time After Strobe
Strobe to Buffer Empty
WRITE to Buffer full
WRITE to INTR Off
TIMER-IN to TIMER OUT Low
TIMER-IN to TIMER-OUT High
Data Bus Enable from READ Control
TIMER-IN Low Time
TIMER-IN High Time
TWP
TPR
TRP
TSBF
TSS
TRBE
TSI
TRDI
TPSS
TPHS
TSBE
TWBF
TWI
TTL
TTH
TRDE
T1
T2
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4, 5
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4
Notes 1, 4, 6
Notes 1, 4
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 50
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 15
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 150
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
360
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 100
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 100
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
340
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC
-
300
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 120
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 40
-
ns
9, 10, 11
-55oC ≤ TA ≤ +125oC 115
-
ns
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to operating frequency.
3. Output timings are measured with purely capacitive load.
4. For design purposes the limits are given as shown. For compatibility with the 80C85RH microprocessor, the AC parameters are tested
as maximums.
5. Parameter tested as part of the functional test. No read and record data available.
6. At low temperature, T1 is measured down to 10ns. If the reading is less than 10ns, the parameter will read 10ns.
7. Read and Record data available on failing data only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETERS
Input Capacitance
I/O Capacitance
Output Capacitance
Data Bus Float After
READ
Recovery Time Between
Controls
SYMBOL
CIN
CI/O
COUT
TRDF
CONDITIONS
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = Open, f = 1MHz, All measurements
referenced to device ground
VDD = 4.75V
TRV
VDD = 4.75V
TEMPERATURE MIN MAX UNITS
TA = +25oC
-
10
pF
TA = +25oC
-
12
pF
TA = +25oC
-
10
pF
-55oC, +25oC,
10 100
ns
+125oC
-55oC, +25oC,
+125oC
-
220
ns
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
Spec Number 518056
5
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