HCTS85MS_02 Datasheet, PDF (5/9 Pages) Intersil Corporation – Radiation Hardened 4-Bit Magnitude Comparator

Specifications HCTS85MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
An to (A>B)OUT
Bn to (A>B)OUT
An, Bn to (A<B)OUT
An, Bn to (A=B)OUT
(A<B)IN to (A<B)OUT
(A>B)IN to (A>B)OUT
(A=B)IN to (A=B)OUT
SYMBOL
(NOTES 1, 2)
CONDITIONS
ICC
VCC = 5.5V, VIN = VCC or GND
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
IIN
VCC = 5.5V, VIN = VCC or GND
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
TEMPERATURE
+25^oC
+25^oC
200K RAD
LIMITS
MIN MAX UNITS
-
0.750 mA
4.0
-
mA
+25^oC
-4.0
-
mA
+25^oC
-
0.1
V
+25^oC
+25^oC
+25^oC
VCC
-
V
-0.1
-
±5
µA
-
-
-
+25^oC
2
43
ns
+25^oC
2
66
ns
+25^oC
2
51
ns
+25^oC
2
50
ns
+25^oC
2
35
ns
+25^oC
2
40
ns
+25^oC
2
37
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25^oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
Spec Number 518624
5