FSYC9055D Datasheet, PDF (5/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

FSYC9055D, FSYC9055R
Typical Performance Curves Unless Otherwise Specified (Continued)
300
100
STARTING T_J = 150^oC
STARTING T_J = 25^oC
IF R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
IF R ≠ 0
t_AV = (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS - V_DD) + 1]
10
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I_AS IS REACHED
V_DS
L
CURRENT
TRANSFORMER
+
I_AS
-
VARY t_P TO OBTAIN
REQUIRED PEAK I_AS
50Ω
0V
t_P
50Ω
V_GS ≤ 20V
DUT
+
V_DD
-
50V-150V
t_P
I_AS
BV_DSS
t_AV
V_DS
V_DD
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
0V
V_GS = -12V
V_DD
R_GS
R_L
V_DS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
V_DS
t_ON
t_d(ON)
t_r
90%
t_OFF
t_d(OFF)
t_f
90%
10%
V_GS
10%
50%
PULSE WIDTH
10%
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5