DG411 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches

DG411/883
Electrical Specifications
Device Tested at: V+ = +15V, V- = -15V, V_L = 5V, GND = 0V, Unless Otherwise Specified. Parameters with MIN
and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A TEMPERATURE
SUBGROUP
(°C)
LIMITS
MIN MAX UNITS
Charge Injection
Q
V_G = 0V, R_G = 0Ω, T_A = +25°C,
9
C_L = 10nF (see Figure 2)
+25
-100 +100 pC
+25
pC
V_G = 6V, R_G = 0Ω, T_A = +25°C
9
C_L = 10nF, V+ = 12V, V- = 0V
(see Figure 2)
+25
-100 +100 pC
+25
pC
TABLE 2. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (See “Electrical Spec Tables” on page 3 and page 4)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 5), 2, 3, 9, 10, 11
Group A Test Requirements
1, 2, 3, 9, 10, 11
Groups C and D Endpoints
1
NOTE:
5. PDA applies to Subgroup 1 only.
Typical Performance Curves
50
A: ±5V
45 _{B: ±8V}
40
C: ±10V
D: ±12V
35 ^{E: ±15V}
F: ±20V
30
25
20
15
A
B
C
D
E
F
10
5
T_A = +25°C
0
-20 -15 -10 -5
0
5
10 15
20
DRAIN VOLTAGE (V)
FIGURE 1. ON-RESISTANCE vs V_D AND POWER SUPPLY
VOLTAGE
240
V+ = 15V, V- = -15V
210 ^VL ^{= 5V, V}S ^{= 10V}
180
150
120
t_ON
90
t_OFF
60
30
0
-55 -35 -15 5
25 45 65 85 105 125
TEMPERATURE (°C)
FIGURE 2. SWITCHING TIME vs TEMPERATURE
5
FN6726.0
June 13, 2008