RFP45N06LE Datasheet, PDF (4/8 Pages) Intersil Corporation – 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

RFP45N06LE, RF1S45N06LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
200
100
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
80
60
40
20
0
0
V_GS = 10V
V_GS = 5V _{VGS = 4V}
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 3.5V
V_GS = 3V
V_GS = 2.5V
1.5
3.0
4.5
6.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
V_DD = 15V
PULSE DURATION = 80µs
80 _{DUTY CYCLE = 0.5% MAX}
60
-55^oC
25^oC
175^oC
40
20
0
0
1.5
3.0
4.5
6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
80
60
I_D = 11.25A
40
I_D = 45A
I_D = 90A
I_D = 22.5A
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
600
V_DD = 30V, I_D = 45A, R_L = 0.67Ω
500
400
300
t_r
t_d(OFF)
t_f
200
100
t_d(ON)
0
0
10
20
30
40
50
R_GS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 5V, I_D = 45A
2.0
1.5
1.0
0.5
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4