RFP30N06LE Datasheet, PDF (4/8 Pages) Harris Corporation – 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

RFP30N06LE, RF1S30N06LESM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
STARTING T_J = 25^oC
STARTING T_J = 150^oC
10
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
T_C = 25^oC
80
60
40
V_GS = 10V
V_GS = 5V
V_GS = 4.5V
V_GS = 4V
V_GS = 3V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
80
-55^oC
60
25^oC
175^oC
40
20
V_DD = 15V
0
0
1.5
3.0
4.5
6.0
7.5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2.5 _{VGS = 5V, ID = 30A}
2.0
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160
200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.0
I_D = 250µA
1.5
1.0
1.0
0.5
0
-80 -40
0
40
80 120 160 200
T_J , JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
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