RFG50N05L Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

RFG50N05L, RFP50N05L
Typical Performance Curves (Continued)
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2.5 _{VGS = 5V}
I_D = 50A
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V_GS = V_DS, I_D = 250µA
1.8
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
1.5 ^{ID = 50A, VGS = 5V}
1.2
0.8
0.4
0
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs GATE VOLTAGE
2.0
I_D = 250µA
1.8
1.2
1.2
0.8
0.8
0.4
0.4
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE
6000
5000
4000
3000
2000
1000
0
0
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_OSS
C_RSS
5
10
15
20
25
V_DS, DRAIN TO SOURCE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
-50
0
50
100
150
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
50
10
R_L = 0Ω
I_G(REF) = 1.25mA
37.5
V_DD = BV_DSS
V_DD = BV_DSS
25
0.75BV_DSS
0.75BV_DSS
5
GATE TO
SOURCE
12.5
VOLTAGE
0.50BV_DSS
0.25BV_DSS
0.50BV_DSS
0.25BV_DSS
DRAIN TO SOURCE VOLTAGE
0
0
I_G(REF)
20
I_G(ACT)
I_G(REF)
TIME-MICROSECONDS 80
I_G(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
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