RFG30P06 Datasheet, PDF (4/8 Pages) Intersil Corporation – 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
-100
STARTING T_J = 25^oC
-10 _{STARTING TJ = 150oC}
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
-1 ^{tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]}
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322,
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
-75
-60
-45
-30
-15
0
0
V_GS = -20V
V_GS = -10V
V_GS = -8V
V_GS = -7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = -6V
V_GS = -5V
V_GS = -4.5V
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-60 ^VDD ^{= -15V}
-45
-55^oC
-30
25^oC
175^oC
-15
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -10V, I_D = 30A
1.5
1
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2
V_GS = V_DS, I_D = 250µA
1.5
2
I_D = 250µA
1.5
1
1
0.5
0.5
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0
-80 -40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-136