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ISL6700 Datasheet, PDF (4/8 Pages) Intersil Corporation – 80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver
ISL6700
Absolute Maximum Ratings
Supply Voltage, VDD (Note 1) . . . . . . . . . . . . . . . . . . . -0.3V to 16V
LI and HI Voltages (Note 1) . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V
Voltage on HS (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 80V
Voltage on HB (Note 1) . . . . . . . . . . . . . . . . VHS-0.3V to VHS+VDD
Voltage on LO (Note 1) . . . . . . . . . . . . . . . . . VSS-0.3 to VDD+0.3V
Voltage on HO (Note 1) . . . . . . . . . . . . . . . . VHS-0.3V to VHB+0.3V
Phase Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V/ns
Maximum Recommended Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 15V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 75V
Voltage on HS (Note 2) . . . . . . . . . .(Repetitive Transient) -1V to 80V
Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . VHS +7.5V to VHS +VDD
Thermal Information
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
SOIC (Note 3) . . . . . . . . . . . . . . . . . . .
95
N/A
QFN (Note 4) . . . . . . . . . . . . . . . . . . . .
49
7
Max Power Dissipation at 25°C in Free Air (SOIC, Note 3). 1.316W
Max Power Dissipation at 25°C in Free Air (QFN, Note 4) . .2.976W
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature Range . . . . . . . . .-40°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
1. All voltages referenced to VSS unless otherwise specified.
2. Based on VDD=15V. The magnitude of the allowable negative transient on the HS pin is a function of the VDD supply voltage. VHS<15.6V-
VDD+VF, where VHS is the magnitude of the allowable negative transient and VF is the forward voltage drop of the bootstrap diode.
3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θJC, the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = 25°C
TJ = -40°C TO
125°C
MIN TYP MAX MIN MAX UNITS
SUPPLY CURRENTS & UNDERVOLTAGE PROTECTION
VDD Quiescent Current
VDD Operating Current
VDD Operating Current
HB Off Quiescent Current
HB On Quiescent Current
HB Operating Current
HB Operating Current
HS Leakage Current
VDD Rising Undervoltage Threshold
VDD Falling Undervoltage Threshold
Undervoltage Hysteresis
IDD
IDDO
IDDO
IHBL
IHBH
IHBO
IHBO
IHLK
VDDUV+
VDDUV-
UVHYS
LI = 0 or VDD
f = 50kHz
f = 500kHz
HI = 0
HI = VDD
f = 50kHz, CL = 1000pF
f = 500kHz, CL = 1000pF
VHS = 80V
VHB = 96V
-
1.9 2.2
-
2.4 mA
-
2.0 2.2
-
2.5 mA
-
2.5 3.0
-
4.0 mA
- 1.25 1.5
-
1.8 mA
- 170 240 - 250 µA
- 1.45 1.8
-
2.0 mA
-
2.4 2.8
-
3.0 mA
-
-
1
-
1
µA
6.8 7.6 8.25 6.5 8.5
V
6.5 7.1 7.8 6.25 8.1
V
0.17 0.45 0.75 0.15 0.90 V
HB Undervoltage Threshold
VHBUV Referenced to HS
4.8 5.3 6.5 4.0 7.5
V
INPUT PINS: LI and HI
Low Level Input Voltage
High Level Input Voltage
Input Voltage Hysteresis
VIL
Full Operating Conditions
VIH
Full Operating Conditions
0.8 1.6
-
0.8
-
V
-
1.7 2.2
-
2.2
V
- 100 -
-
-
mV
Low Level Input Current
High Level Input Current
IIL
VIN = 0V, Full Operating Conditions
IIH
VIN = 5V, Full Operating Conditions
-70 -60 -30 -80 -30 µA
30 115 130 30 145 µA
4
FN9077.6
December 29, 2004