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ISL6605_06 Datasheet, PDF (4/9 Pages) Intersil Corporation – Synchronous Rectified MOSFET Driver
ISL6605
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (VBOOT). . . . . . . -0.3V to 22V (DC) or 33V (<200ns)
BOOT To PHASE Voltage (VBOOT-PHASE) . . . . . . . . . . -0.3V to 7V
PHASE Voltage . . . . . . . . . . . . . . GND - 0.3V (DC) to 28V (<200ns)
. . . . . . . . . . GND - 5V (<100ns Pulse Width, 10μJ) to 28V (<200ns)
UGATE Voltage . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT+0.3V
. . . . . . . VPHASE - 4V (<200ns Pulse Width, 20μJ) to VBOOT+0.3V
LGATE Voltage . . . . . . . . . . . . . . GND - 0.3V (DC) to VVCC + 0.3V
. . . . . . . . . . . GND - 2V (<100ns Pulse Width, 4μJ) to VVCC + 0.3V
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to 125°C
ESD Rating
HBM Class 1 JEDEC STD
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
Thermal Information
Thermal Resistance (Notes 1, 2, & 3) θJA(°C/W) θJC(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . . 110
N/A
QFN Package (Notes 2, 3). . . . . . . . . . 95
36
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3. θJC, "case temperature" location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications These specifications apply for TA = -40°C to 85°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
VCC SUPPLY CURRENT
Bias Supply Current
Bias Supply Current
PWM INPUT
IVCC
EN = LOW, TA = 0°C to 70°C
-
EN = LOW, TA = -40°C to 85°C
-
IVCC
PWM pin floating, VVCC = 5V
-
Input Current
IPWM
VPWM = 5V
-
VPWM = 0V
-
PWM Three-State Rising Threshold
VVCC = 5V, TA = 0°C to 70°C
-
VVCC = 5V, TA = -40°C to 85°C
-
PWM Three-State Falling Threshold
VVCC = 5V
3.3
Three-State Shutdown Holdoff Time
VVCC = 5V, temperature = 25°C
-
EN INPUT
EN LOW Threshold
1.0
EN HIGH Threshold
-
SWITCHING TIME
UGATE Rise Time
tRUGATE VVCC = 5V, 3nF Load
-
LGATE Rise Time
tRLGATE VVCC = 5V, 3nF Load
-
UGATE Fall Time
tFUGATE VVCC = 5V, 3nF Load
-
LGATE Fall Time
tFLGATE VVCC = 5V, 3nF Load
-
UGATE Turn-Off Propagation Delay
tPDLUGATE VVCC = 5V, 3nF Load
-
LGATE Turn-Off Propagation Delay
tPDLLGATE VVCC = 5V, 3nF Load
-
OUTPUT
Upper Drive Source Resistance
RUGATE 500mA Source Current
-
Upper Driver Source Current (Note 4)
IUGATE VUGATE-PHASE = 2.5V
-
Upper Drive Sink Resistance
RUGATE 500mA Sink Current
-
Upper Driver Sink Current (Note 4)
IUGATE VUGATE-PHASE = 2.5V
-
Lower Drive Source Resistance
RLGATE 500mA Source Current
-
Lower Driver Source Current (Note 4)
ILGATE VLGATE = 2.5V
-
Lower Drive Sink Resistance
RLGATE 500mA Sink Current
-
Lower Driver Sink Current (Note 4)
ILGATE VLGATE = 2.5V
-
NOTE:
4. Guaranteed by design. Not 100% tested in production.
TYP
-
-
30
250
-250
-
-
-
420
-
-
8
8
8
4
8
8
1.0
2.0
1.0
2.0
1.0
2.0
0.4
4.0
MAX UNITS
1.5
μA
2
μA
-
μA
-
μA
-
μA
1.70
V
1.75
V
-
V
-
ns
-
V
2.0
V
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
2.5
Ω
-
A
2.5
Ω
-
A
2.5
Ω
-
A
1.0
Ω
-
A
4
FN9091.7
May 9, 2006