IRFF430 Datasheet, PDF (4/7 Pages) Intersil Corporation – 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

IRFF430
Typical Performance Curves Unless Otherwise Specified (Continued)
20
10
10 s
100 s
1
1ms
OPERATION IN THIS
AREA IS LIMITED
BY r_DS(ON)
0.1
10ms
100ms
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
0.01
1
10
DC
10²
10³
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
6
5
V_GS = 10V
80µs PULSE TEST
4
V_GS = 5.5V
V_GS = 5V
3
V_GS = 4.5V
2
1
V_GS = 4V
0
0
100
200
300
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5
80µs PULSE TEST
4
3
2
V_GS = 10V
V_GS = 5.5V
V_GS = 5V
V_GS = 4.5V
1
V_GS = 4V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
4
V_GS = 10V
V_GS = 20V
3
2
1
0
5
10
15
20
25
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5
V_DS > I_D(ON) x r_DS(ON)MAX
80µs PULSE TEST
4
3
2
T_J = 125^oC
T_J = 25^oC
T_J = -55^oC
1
0
0
1
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2 ^{VGS = 10V}
I_D = 1.5A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4