IRF9630 Datasheet, PDF (4/7 Pages) Intersil Corporation – 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

IRF9630, RF1S9630SM
Typical Performance Curves Unless Otherwise Specified (Continued)
-100
-10
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
10µs
100µs
1ms
10ms
100ms
DC
-0.1-1
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-15
V_GS = -10V
-12
-9
-6
-9V
V_GS = -8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -7V
V_GS = -6V
-3
V_GS = -5V
V_GS = -4V
0
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-16
V_GS = -10V
V_GS = -9V
V_GS = -8V
- 12
V_GS = -7V
-8
V_GS = -6V
-4
V_GS = -5V
V_GS = -4V
00
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
2.0
1.6
1.2
V_GS = -10V
0.8
0.4
V_GS = - 20V
0
0
-5
-10
-15
-20
-25
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
-15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-12
-55^oC
-9
25^oC
-6
-125^oC
-3
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-30