IRF830 Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
Typical Performance Curves Unless Otherwise Specified (Continued)
10²
OPERATION IN THIS
REGION IS LIMITED
BY r_DS(ON)
10
10µs
100µs
1
1ms
0.1
1
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
10³
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
3
2
V_GS = 10V
V_GS = 5.5V
V_GS = 5.0V
V_GS = 4.5V
1
V_GS = 4.0V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
V_GS = 10V
4
V_GS = 20V
2
0
0
4
8
12
16
20
T_C, CASE TEMPERATURE (^oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
6
V_GS = 10V
V_GS = 5.5V
5
4
V_GS = 5.0V
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
V_GS = 4.5V
1
V_GS = 4.0V
0
0
50
100
150
200
250
300
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS > I_D(ON) x r_DS(ON)MAX
4
3
T_J = 125^oC
2
T_J = 25^oC
1
T_J = -55^oC
0
0
1
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I_D = 2.5A, V_GS = 10V
1.8
1.4
1.0
0.6
0.2
-60 -40 -20 0 20 40 60 80 100 120 140
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-254