FSL9110D Datasheet, PDF (4/8 Pages) Intersil Corporation – 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

FSL9110D, FSL9110R
Typical Performance Curves Unless Otherwise Specified (Continued)
3
50
10
2
T_C = 25^oC
100µs
1
0
-50
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
12V
Q_GS
V_G
QG_ON
Q_GD
1
0.1
-1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
10ms
100ms
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-500
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V_GS = -12V, I_D = 1.5A
2.0
1.5
1.0
0.5
CHARGE
FIGURE 5. BASIC GATE CHARGE WAVEFORM
0.0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED r_DS(ON) vs JUNCTION TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10^-5
10^-4
10^-3
P_DM
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
10^-2
10^-1
t₁
t₂
10⁰
10¹
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4-4