82C86H Datasheet, PDF (4/8 Pages) Intersil Corporation – CMOS Octal Bus Transceiver

82C86H
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND -0.5V to V_CC +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0^oC to +70^oC
I82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40^oC to +85^oC
M82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55^oC to +125^oC
Thermal Information
Thermal Resistance (Typical)
θ_JA (^oC/W) θ_JC (^oC/W)
CERDIP Package . . . . . . . . . . . . . . . .
70
16
CLCC Package . . . . . . . . . . . . . . . . . .
80
20
PDIP Package . . . . . . . . . . . . . . . . . . .
75
N/A
PLCC Package . . . . . . . . . . . . . . . . . .
75
N/A
Maximum Storage Temperature Range . . . . . . . . . -65^oC to +150^oC
Maximum Junction Temperature Hermetic Package . . . . . . . +175^oC
Maximum Junction Temperature Plastic Package. . . . . . . . . +150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300^oC
(PLCC - Lead Tips Only)
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications V_CC = 5.0V ± 10%; T_A = 0^oC to +70^oC (C82C86H);
T_A = -40^oC to +85^oC (I82C86H);
T_A = -55^oC to +125^oC (M82C86H)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V_IH
Logical One
Input Voltage
2.0
-
V
C82C86H, I82C86H
2.2
V
M82C86H (Note 1)
V_IL
Logical Zero Input Voltage
-
0.8
V_OH
Logical One Output Voltage
B Outputs
3.0
A Outputs
3.0
A or B Outputs
V_CC -0.4
V_OL
Logical Zero Output Voltage
B Outputs
0.45
A Outputs
0.45
I_I
Input Leakage Current
IO
Output Leakage Current
-10.0
10.0
-10.0
10.0
V
V
I_OH = -8mA
V
I_OH = -4mA
V
I_OH = -100µA
V
I_OL = 20mA
V
I_OL = 12mA
µA
V_IN = GND or V_CC DIP Pins 9, 11
µA
VO = GND or V_CC, OE ≥ V_CC -0.5V
DIP Pins 1 - 8, 12 - 19
ICCSB
ICCOP
Standby Power Supply
Current
Operating Power Supply
Current
-
10
µA
V_IN = V_CC or GND, V_CC = 5.5V, Outputs Open
-
1
mA/MHz T_A = +25^oC, Typical (See Note 2)
NOTES:
1. V_IH is measured by applying a pulse of magnitude = V_IH(MIN) to one data input at a time and checking the corresponding device output for
a valid logical “1” during valid input high time. Control pins (T, OE) are tested separately with all device data input pins at V_CC -0.4
2. Typical ICCOP = 1mA/MHz of read/ cycle time. (Example: 1.0µs read/write cycle time = 1mA).
Capacitance T_A = +25^oC
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
CIN
Input Capacitance
B Inputs
A Inputs
18
pF
Freq = 1MHz, all measurements are
referenced to device GND
14
pF
4-320