RFP2N12L Datasheet, PDF (3/5 Pages) Intersil Corporation – 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET

RFP2N12L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
1
T_J
T_C
=
=
MAX RATED
25^oC
0.10
0.01
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
4 _{TC = 25oC}
V_GS = 10V
PULSE DURATION = 80µs
3
V_GS = 5V
V_GS = 4V
2
V_GS = 3V
1
V_GS = 2V
0 1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
6
V_DS = 15V
PULSE DURATION = 80µs
5
4
-40^oC
25^oC
3
125^oC
2
125^oC
1
-40^oC
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
V_GS = 5V
4 ^{PULSE DURATION = 80µs}
125^oC
3
25^oC
2
1
-40^oC
0.5
0
1
2
3
4
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
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