RFH25P08 Datasheet, PDF (3/4 Pages) Intersil Corporation – -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

RFH25P08, RFH25P10, RFK25P08, RFK25P10
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
30
25
20
15
10
5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
I_D MAX
CONTINUOUS
T_C = 25^oC, T_J = MAX RATED
10
DC OPERATION
OPERATION IN
THIS AREA MAY BE
LIMITED BY r_DS(ON)
1
0.1-1
V_DSS(MAX) = -80V
RFH25P08, RFK25P08
V_DSS(MAX) = -100V
RFH25P10, RFK25P10
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
100
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
80 ^{TC = 25oC}
V_GS = -20V
V_GS = -10V
60
V_GS = -8V
40
V_GS = -7V
V_GS = -6V
20
V_GS = -5V
V_GS = -4V
0
0
-2
-4
-6
-8
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
40 _{VDS = -10V}
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
30
20
T_C = -40^oC _25oC
125^oC
0.20
V_GS = -10V
PULSE DURATION = 80µs
0.16 ^{DUTY CYCLE ≤ 2%}
T_C = 125^oC
0.12
T_C = 25^oC
0.08
T_C = -40^oC
10
125^oC
0.04
-40^oC
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
0
0
10
20
30
40
50
I_D, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
6-3