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JANSR2N7440 Datasheet, PDF (3/8 Pages) Intersil Corporation – Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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JANSR2N7440
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
trr
TEST CONDITIONS
ISD = 10A
ISD = 10A,dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
-0.6
-
-1.8
V
-
-
160
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = -80V
VGS = -12V, ID = 10A
VGS = -12V, ID = 6A
-100
-2.0
-
-
-
-
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
-6.0
100
25
-3.10
0.280
UNITS
V
V
nA
µA
V
Ω
Single Event Effects (SEB, SEGR) Note 4
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Ni
26
43
Br
37
36
APPLIED
VGS BIAS
(V)
20
10
(NOTE 6)
MAXIMUM
VDS BIAS (V)
-100
-100
Br
37
36
15
-80
Br
37
36
20
-50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
-120
-100
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-80
-60
-40
-20
0 TEMP = 25oC
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO IAS
3
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