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| JANSR2N7400 Datasheet, PDF (3/8 Pages) Intersil Corporation – 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET | |||
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JANSR2N7400
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Forward Voltage
Reverse Recovery Time
VSD
ISD = 8A
trr
ISD = 8A, dISD/dt = 100A/µs
0.6
-
-
-
Electrical Speciï¬cations up to 100K RAD TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS
VGS = 0, ID = 1mA
200
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = 12V, ID = 8A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 5A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
1.8
340
MAX
-
4.0
100
25
3.70
0.440
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
-20
Area
Br
37
36
-5
Br
37
36
-10
Br
37
36
-15
Br
37
36
-20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
â¦
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
200
200
160
100
40
Typical Performance Curves Unless Otherwise Speciï¬ed
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
240
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
200
1E-4
160
ILM = 10A
120
80
40
TEMP = 25oC
0
0
-5
-10
-15
-20
-25
VGS (V)
1E-5
1E-6
1E-7
10
30A
100A
300A
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
2-60
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