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| JANSR2N7398 Datasheet, PDF (3/8 Pages) Intersil Corporation – 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET | |||
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JANSR2N7398
Source to Drain Diode Speciï¬cations
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 2A
ISD = 2A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
390
ns
Electrical Speciï¬cations up to 100K RAD TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
500
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 400V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = 12V, ID = 2A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 1A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-
4.0
100
25
5.25
2.50
UNITS
V
V
nA
µA
V
â¦
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
-15
Area
Ni
26
43
-20
Br
37
36
-5
Br
37
36
-10
Br
37
36
-15
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
500
450
500
400
100
Typical Performance Curves Unless Otherwise Speciï¬ed
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
600
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
500
400
300
1E-3
1E-4
1E-5
ILM = 10A
30A
100A
200
100
TEMP = 25oC
0
0
-5
-10
-15
-20
-25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-6
300A
1E-7
10
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
2-48
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