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| JANSR2N7275 Datasheet, PDF (3/7 Pages) Intersil Corporation – 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET | |||
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JANSR2N7275
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 5A
trr
ISD = 5A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
600
ns
Electrical Speciï¬cations up to 100K RAD TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
200
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
2.0
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = 10V, ID = 5A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = 10V, ID = 3A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.0
100
25
2.63
0.500
UNITS
V
V
nA
µA
V
â¦
Typical Performance Curves Unless Otherwise Speciï¬ed
7
50
TC = 25oC
6
5
4
3
2
1
0
-50
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
10ms
100ms
0.1
1
10
100
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
10-5
SINGLE PULSE
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2-10
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