ISL74422ARH Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened 9A, Non-Inverting Power Radiation Hardened 9A, Non-Inverting Power

ISL74422ARH
Die Characteristics
DIE DIMENSIONS:
3838µm x 4829µm (151.1 mils x 190.1mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10⁵ A/cm²
Transistor Count:
30
Metallization Mask Layout
ISL74422ARH
LGND
IN
LVCC
PGND
PVCC
OUT2
OUT1
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3
FN9031.2
April 1, 2010