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ISL6525 Datasheet, PDF (3/11 Pages) Intersil Corporation – Buck and Synchronous-Rectifier Pulse-Width Modulator (PWM) Controller | |||
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ISL6525
Absolute Maximum Ratings
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15.0V
Boot Voltage, VBOOT - VPHASE. . . . . . . . . . . . . . . . . . . . . . . +15.0V
Input, Output or I/O Voltage . . . . . . . . . . . .GND -0.3V to VCC +0.3V
ESD Classiï¬cation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2
Operating Conditions
Supply Voltage, VCC . . . . . .
Ambient Temperature Range
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+12V ±10%
0oC to 70oC
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . 0oC to 125oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
117
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(Lead tips only)
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Speciï¬cations Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply
Shutdown Supply
ICC
EN = VCC; UGATE and LGATE Open
EN = 0V
-
5
-
mA
-
50
100
µA
POWER-ON RESET
Rising VCC Threshold
Falling VCC Threshold
Enable - Input threshold Voltage
Rising VOCSET Threshold
OSCILLATOR
VOCSET = 4.5VDC
VOCSET = 4.5VDC
VOCSET = 4.5VDC
-
-
10.4
V
8.2
-
-
V
0.8
-
2.0
V
-
1.27
-
V
Free Running Frequency
Total Variation
Ramp Amplitude
REFERENCE
âVOSC
RT = OPEN, VCC = 12
6k⦠< RT to GND < 200kâ¦
RT = OPEN
185
200
215
kHz
-15
-
+15
%
-
1.9
-
VP-P
Reference Voltage
1.188 1.20 1.212
V
ERROR AMPLIFIER
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBW
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/µs
GATE DRIVERS
Upper Gate Source
Upper Gate Sink
Lower Gate Source
Lower Gate Sink
PROTECTION
IUGATE
RUGATE
ILGATE
RLGATE
VBOOT - VPHASE = 12V, VUGATE = 6V
ILGATE = 0.3A
VCC = 12V, VLGATE = 6V
ILGATE = 0.3A
350
500
-
mA
-
5.5
10
W
300
450
-
mA
-
3.5
6.5
W
OCSET Current Source
Soft Start Current
PGOOD DELAY
IOCSET
ISS
VOCSET = 4.5VDC
170
200
230
µA
-
10
-
µA
Discharge Current Source
5.5
10
14.5
µA
NMOS gate threshold voltage
-
2
-
V
3
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