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ISL6525 Datasheet, PDF (3/11 Pages) Intersil Corporation – Buck and Synchronous-Rectifier Pulse-Width Modulator (PWM) Controller
ISL6525
Absolute Maximum Ratings
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15.0V
Boot Voltage, VBOOT - VPHASE. . . . . . . . . . . . . . . . . . . . . . . +15.0V
Input, Output or I/O Voltage . . . . . . . . . . . .GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2
Operating Conditions
Supply Voltage, VCC . . . . . .
Ambient Temperature Range
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+12V ±10%
0oC to 70oC
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . 0oC to 125oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
117
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(Lead tips only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply
Shutdown Supply
ICC
EN = VCC; UGATE and LGATE Open
EN = 0V
-
5
-
mA
-
50
100
µA
POWER-ON RESET
Rising VCC Threshold
Falling VCC Threshold
Enable - Input threshold Voltage
Rising VOCSET Threshold
OSCILLATOR
VOCSET = 4.5VDC
VOCSET = 4.5VDC
VOCSET = 4.5VDC
-
-
10.4
V
8.2
-
-
V
0.8
-
2.0
V
-
1.27
-
V
Free Running Frequency
Total Variation
Ramp Amplitude
REFERENCE
∆VOSC
RT = OPEN, VCC = 12
6kΩ < RT to GND < 200kΩ
RT = OPEN
185
200
215
kHz
-15
-
+15
%
-
1.9
-
VP-P
Reference Voltage
1.188 1.20 1.212
V
ERROR AMPLIFIER
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBW
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/µs
GATE DRIVERS
Upper Gate Source
Upper Gate Sink
Lower Gate Source
Lower Gate Sink
PROTECTION
IUGATE
RUGATE
ILGATE
RLGATE
VBOOT - VPHASE = 12V, VUGATE = 6V
ILGATE = 0.3A
VCC = 12V, VLGATE = 6V
ILGATE = 0.3A
350
500
-
mA
-
5.5
10
W
300
450
-
mA
-
3.5
6.5
W
OCSET Current Source
Soft Start Current
PGOOD DELAY
IOCSET
ISS
VOCSET = 4.5VDC
170
200
230
µA
-
10
-
µA
Discharge Current Source
5.5
10
14.5
µA
NMOS gate threshold voltage
-
2
-
V
3