ISL6255 Datasheet, PDF (3/22 Pages) Intersil Corporation – Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers

ISL6255, ISL6255A
Absolute Maximum Ratings
DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
CSIP-SGATE, CSIP-BGATE . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
BOOT-PHASE, VDD-GND, VDDP-PGND
ACPRN and DCPRN to GND . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
ACSET and DCSET to GND (Note 3) . . . . . . . . -0.3V to VDD+0.3V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
ACLIM, CHLIM, VREF, CELLS to GND . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Information
Thermal Resistance
θ_JA (°C/W) θ_JC (°C/W)
QFN Package (Notes 4, 5). . . . . . . . . .
39
9.5
QSOP Package (Note 4) . . . . . . . . . . .
80
NA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 2
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET and DCSET is below 0V, the current through ACSET and DCSET should be limited to less than 1mA.
4. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
PARAMETER
DCIN=CSIP=CSIN=18V, CSOP=CSON=12V, ACSET=DCSET=1.5V, ACLIM=VREF, VADJ=Floating,
EN=VDD=5V, BOOT-PHASE=5.0V, GND=PGND=0V, C_VDD=1µF, I_VDD=0mA, T_A=-10°C to +100°C,
T_J ≤ 125°C, unless otherwise noted.
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN=VDD or GND, 7V ≤ DCIN ≤ 25V
1.4
3
mA
Battery Leakage Current (Note 6)
DCIN=0, no load
3
10
µA
VDD Output Voltage/Regulation
VDD Undervoltage Lockout Trip Point
7V ≤ DCIN ≤ 25V, 0 ≤ I_VDD ≤ 30mA
VDD Rising
4.925
5.075
5.225
V
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
Reference Output Voltage VREF
Battery Charge Voltage Accuracy
0 ≤ I_VREF ≤ 300µA
CSON=16.8V, CELLS=VDD, VADJ=Float
2.365
-0.5
2.39
2.415
V
0.5
%
CSON=12.6V, CELLS=GND, VADJ=Float
-0.5
0.5
%
CSON=8.4V, CELLS=Float, VADJ=Float
-0.5
0.5
%
CSON=17.64V, CELLS=VDD, VADJ=VREF
-0.5
0.5
%
CSON=13.23V, CELLS=GND, VADJ=VREF
-0.5
0.5
%
CSON=8.82V, CELLS=Float, VADJ=VREF
-0.5
0.5
%
CSON=15.96V, CELLS=VDD, VADJ=GND
-0.5
0.5
%
CSON=11.97V, CELLS=GND, VADJ=GND
-0.5
0.5
%
CSON=7.98V, CELLS=Float, VADJ=GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
1.24
1.26
1.28
V
ACSET Input Bias Current Hysteresis
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET ≥ 1.26V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
µA
DCSET Threshold
1.24
1.26
1.28
V
3
FN9203.1
June 17, 2005