IRFD320 Datasheet, PDF (3/6 Pages) Intersil Corporation – 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET

IRFD320
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
I_SDM
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
MIN
TYP
MAX UNITS
-
-
0.5
A
-
-
2.0
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
V_SD
T_J = 25^oC, I_SD = 2.0A, V_GS = 0V (Figure 12)
-
t_rr
T_J = 150^oC, I_SD = 2.0A, dI_SD/dt = 100A/µs
-
Q_RR
T_J = 150^oC, I_SD = 2.0A, dI_SD/dt = 100A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4. V_DD = 40V, starting T_J = 25^oC, L = 29.09mH, R_G = 50Ω, peak I_AS = 2.5A.
-
1.6
V
450
-
ns
3.1
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
0.5
1.0
0.8
0.3
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0.1
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.1
00.1
0.001
1
T_J
T_C
=
=
MAX RATED
25^oC
SINGLE PULSE
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10µs
100µs
1ms
10ms
100ms
1s
DC
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
6
V_GS = 6.0V
5
V_GS = 10V
4
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 5.5V
V_GS = 5.0V
2
V_GS = 4.5V
1
V_GS = 4.0V
00
100
200
300
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-301