IRFD210 Datasheet, PDF (3/6 Pages) Intersil Corporation – 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET

IRFD210
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
SYMBOL
TEST CONDITIONS
I_SD
I_SDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Diode
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = 0.6A, V_GS = 0V (Figure 12)
T_J = 150^oC, I_SD = 0.6A, dI_SD/dt = 100A/µs
T_J = 150^oC, I_SD = 0.6A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. V_DD = 20V, starting T_J = 25^oC, L = 112.7µH, R_G = 50Ω, peak I_AS = 2.2A.
Typical Performance Curves Unless Otherwise Specified
MIN TYP MAX UNITS
-
-
0.6
A
-
-
2.5
A
-
-
2.0
V
-
290
-
ns
-
2.0
-
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
0.6
0.5
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10µs
1
100µs
1ms
10ms
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY R_DS(ON)
100ms
T_J
T_C
=
=
MAX RATED
25^oC
SINGLE PULSE
0.001
1
10
DC
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
5
V_GS = 10V
PULSE DURATION = 80µs
V_GS = 9V
DUTY CYCLE = 0.5% MAX
4
V_GS = 8V
V_GS = 7V
3
2
V_GS = 6V
1
V_GS = 5V
V_GS = 4V
0
0
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-283