IRF9640 Datasheet, PDF (3/7 Pages) Intersil Corporation – 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

IRF9640, RF1S9640SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
I_SD
I_SDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
-
-
-11
A
D
-
-
-44
A
S
Source to Drain Diode Voltage (Note 2)
V_SD
T_J = 25^oC, I_SD = -11A, V_GS = 0V (Figure 13)
-
-
-1.5
V
Reverse Recovery Time
t_rr
T_J = 150^oC, I_SD = -11A, dI_SD/dt = 100A/µs
-
300
-
ns
Reverse Recovery Charge
Q_RR
T_J = 150^oC, I_SD = -11A, dI_SD/dt = 100A/µs
-
1.9
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 9.8mH, R_G = 25Ω, peak I_AS = 11A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-15
-10
-5
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0110_-5
10^-4
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10^-3
10^-2
10^-1
t₁, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-35