IRF614 Datasheet, PDF (3/7 Pages) Intersil Corporation – 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

IRF614
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
L_D
Measured From the
Drain Lead, 6mm
Modified MOSFET
-
Symbol Showing the
(0.25in) From Package Internal Devices
to Center of Die
Inductances
D
L_S
Measured From the
Source Lead, 6mm
-
L_D
(0.25in) from Header to
Source Bonding Pad
G
L_S
S
R_θJC
-
R_θJA Free Air Operation
-
4.5 -
nH
7.5 -
nH
-
6.4 ^oC/W
- 62.5 ^oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I_SD Modified MOSFET Sym-
D
bol Showing the Integral
I_{SDM Reverse P-N Junction}
Rectifier
G
MIN TYP MAX UNITS
-
-
2.0
A
-
-
8.0
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
V_SD T_J = 25^oC, I_SD = 2.0A, V_GS = 0V, (Figure 13)
-
-
2.0
V
t_rr
T_J = 25^oC, I_SD = 2.0A, dI_SD/dt = 100A/µs
67
- 340 ns
Q_RR T_J = 25^oC, I_SD = 2.0A, dI_SD/dt = 100A/µs
0.24 0.54 1.2 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 10V, starting T_J = 25^oC, L = 6.18mH, R_G = 50Ω, peak I_AS = 5A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
2.0
1.6
1.2
0.8
0.4
0
150
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
3