HS-1825AEH Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened High-Speed, Dual Output PWM

HS-1825ARH, HS-1825AEH
Die Characteristics
DIE DIMENSIONS
4710µm x 3570µm (185 mils x 140 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<2.0 x 10⁵ A/cm²
Transistor Count
225
HS-1825ARH,HS-1825AEH
RT (5)
CT (6)
RAMP (7)
SS (8)
ILIM (9)
OSCGND
(NOTE 1)
GND (10)
OUTA (11)
PGND (12)
(NOTE 2)
VC (13)
(NOTE 2)
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be
connected to GND.
2. PGND and VC each require two bond pad connections.
(4) CLK/LEB
(3) EAOUT
(2) IN+
(1) IN-
(16) V_REF
(15) V_CC
(14) OUTB
(12) PGND
(NOTE 2)
(13) VC
(NOTE 2)
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3
FN4561.9
May 10, 2012