HM-6504 Datasheet, PDF (3/10 Pages) Intersil Corporation – 4096 x 1 CMOS RAM

HM-6504/883
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance
θ_JA
CERDIP Package . . . . . . . . . . . . . . . . 75^oC/W
θ_JC
15^oC/W
Maximum Storage Temperature Range . . . . . . . . .-65^oC to +150^oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300^oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range . . . . . . . . . . . . . . . . -55^oC to +125^oC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +0.8V
Input High Voltage . . . . . . . . . . . . . . . . . . . VCC -2.0V to VCC +0.3V
TABLE 1. HM-6504/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
MIN MAX UNITS
Output Low Voltage
Output High Voltage
Input Leakage Current
Output Leakage Current
Data Retention Supply Current
Operating Supply Current
Standby Supply Current
VOL
VOH
II
IOZ
ICCDR
ICCOP
ICCSB
VCC = 4.5V,
IOL = 2mA
VCC = 4.5V,
IOH = -1.0mA
VCC = 5.5V,
VI = GND or VCC
VCC = 5.5V,
VO = GND or VCC
VCC = 2.0V,
E = VCC,
IO = 0mA
VCC = 5.5V,
(Note 2),
E = 1MHz,
IO = 0mA
VCC = 5.0V,
E = VCC -0.3V,
IO = 0mA
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
-55^oC ≤ T_A ≤ +125^oC
-
0.4
V
-55^oC ≤ T_A ≤ +125^oC 2.4
-
V
-55^oC ≤ T_A ≤ +125^oC -1.0 +1.0
µA
-55^oC ≤ T_A ≤ +125^oC -1.0 +1.0
µA
-55^oC ≤ T_A ≤ +125^oC
-
-55^oC ≤ T_A ≤ +125^oC
-
25
µA
7
mA
-55^oC ≤ T_A ≤ +125^oC
-
50
µA
NOTES:
1. All voltage referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
6-136