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HCTS374T Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
HCTS374T
Die Characteristics
DIE DIMENSIONS:
(2743µm x 2692µm x 533µm ±51µm)
108 x 106 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11kÅ ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased (Silicon on Sapphire)
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (SiO2)
Thickness: 13kÅ ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
468
PROCESS:
CMOS SOS
Metallization Mask Layout
HCTS374T
D0
Q0
OE
VCC
Q7
(3)
(2)
(1)
(20)
(19)
D1 (4)
Q1 (5)
(18) D7
(17) D6
Q2 (6)
(16) Q6
(15) Q5
D2 (7)
(14) D5
(8) (9)
D3 Q3
(10) (11)
GND CP
(12)
(13)
Q4
D4
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
series for the HCTS374 is TA14404A.
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