HCTS244T Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened Octal Buffer/Line Driver, Three-State

Die Characteristics
DIE DIMENSIONS:
(2743µm x 2692µm x 533µm ±51µm)
108 x 106 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0kÅ ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
2Y3
(3)
HCTS244T
PASSIVATION:
Type: Silox (S_iO₂)
Thickness: 13.0kÅ ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm²
TRANSISTOR COUNT:
264
PROCESS:
CMOS SOS
HCTS244T
1A0
1OE
V_CC
2OE
(2)
(1)
(20)
(19)
1A1 (4)
2Y2 (5)
(18) 1Y0
(17) 2A3
1A2 (6)
(16) 1Y1
(15) 2A2
2Y1 (7)
(14) 1Y2
(8)
(9)
1A3 2Y0
(10) (11)
GND 2A0
(12)
(13)
1Y3
2A1
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
series for the HCTS244 is TA14402A.
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